[B-1-5] 1.2nm HfSiON/SiON stacked gate insulators for 65nm-node MISFETs

Motofumi Saitoh, Nobuyuki Ikarashi, Heiji Watanabe, Shinji Fujieda, Hirohito Watanabe, Toshiyuki Iwamoto, Ayuka Morioka, Takashi Ogura, Masayuki Terai, Koji Watanabe, Makoto Miyamura, Toru Tatsumi, Taeko Ikarashi, Koji Masuzaki, Yukishige Saito, Yuko Yabe (1.System Devices Research Laboratories, NEC Corp.)

https://doi.org/10.7567/SSDM.2004.B-1-5