[B-10-2] Device Design Consideration for Four-terminal Double-gate MOSFET (4T-DGFET)

M. Masahara、Y.-X. Liu、K. Sakamoto、K. Endo、T. Sekigawa、T. Matsukawa、E. Suzuki (1.Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST))

https://doi.org/10.7567/SSDM.2004.B-10-2