[B-10-2] Device Design Consideration for Four-terminal Double-gate MOSFET (4T-DGFET)

M. Masahara, Y.-X. Liu, K. Sakamoto, K. Endo, T. Sekigawa, T. Matsukawa, E. Suzuki (1.Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST))

https://doi.org/10.7567/SSDM.2004.B-10-2