[B-4-2] Highly Manufacturable 64M bit Ultra Low Power SRAM Using a Novel 3-Dimensional S3 (Stacked Single-crystal Si) Cell Technology

W.S Cho、H. Lim、J.H. Jang、Y.H. Kang、J.H. Moon、C.D. Yeo、K.H. Kwak、B.H. Choi、B.J. Hwang、W.R. Jung、S.J. Kim、J.H. Kim、J.H. Na、J.H. Jeong、S.M. Jung、Kinam. Kim (1.Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.)

https://doi.org/10.7567/SSDM.2004.B-4-2