[B-4-2] Highly Manufacturable 64M bit Ultra Low Power SRAM Using a Novel 3-Dimensional S3 (Stacked Single-crystal Si) Cell Technology

W.S Cho, H. Lim, J.H. Jang, Y.H. Kang, J.H. Moon, C.D. Yeo, K.H. Kwak, B.H. Choi, B.J. Hwang, W.R. Jung, S.J. Kim, J.H. Kim, J.H. Na, J.H. Jeong, S.M. Jung, Kinam. Kim (1.Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.)

https://doi.org/10.7567/SSDM.2004.B-4-2