Improvements and Analysis of Neutron Induced Soft Error and Latch-up in High Speed Full CMOS 6T SRAM Products up to 65nm Technology

Soon -Moon Jung; Hoon Lim; Wonseok Cho; Jaehun Jeong; Youngseop Rah; Jaekyun Park; Keunho Lee; Jiyeon Lee; Kyungsik Cha; Chulsoon Chang; Youngchul Jang; Kinam Kim

doi:https://doi.org/10.7567/SSDM.2004.B-4-4

[B-4-4] Improvements and Analysis of Neutron Induced Soft Error and Latch-up in High Speed Full CMOS 6T SRAM Products up to 65nm Technology

Soon -Moon Jung、Hoon Lim、Wonseok Cho、Jaehun Jeong、Youngseop Rah、Jaekyun Park、Keunho Lee、Jiyeon Lee、Kyungsik Cha、Chulsoon Chang、Youngchul Jang、Kinam Kim (1.R&D Center, Samsung Electronics Kiheung-Eup)

https://doi.org/10.7567/SSDM.2004.B-4-4

2004 International Conference on Solid State Devices and Materials

[B-4-4] Improvements and Analysis of Neutron Induced Soft Error and Latch-up in High Speed Full CMOS 6T SRAM Products up to 65nm Technology