Effect of Fluorine on Interface Characteristics in Low-temperature CMIS Process with HfO2 Metal Gate Stacks

Takaoki SASAKI; Yasushi AKASAKA; Kazuhiro MIYAGAWA; Takeshi HOSHI; Yasuhiko WATANABE; Fumio OOTSUKA; Mitsuo YASUHIRA; Tsunetoshi ARIKADO

doi:https://doi.org/10.7567/SSDM.2004.B-5-3

[B-5-3] Effect of Fluorine on Interface Characteristics in Low-temperature CMIS Process with HfO2 Metal Gate Stacks

Takaoki SASAKI、Yasushi AKASAKA、Kazuhiro MIYAGAWA、Takeshi HOSHI、Yasuhiko WATANABE、Fumio OOTSUKA、Mitsuo YASUHIRA、Tsunetoshi ARIKADO (1.Semiconductor Leading Edge Technologies Inc.)

https://doi.org/10.7567/SSDM.2004.B-5-3

2004 International Conference on Solid State Devices and Materials

[B-5-3] Effect of Fluorine on Interface Characteristics in Low-temperature CMIS Process with HfO2 Metal Gate Stacks