The Japan Society of Applied Physics

[B-7-1] Effects of Base Oxide and Silicon Composition on Charge Trapping in HfSiO/SiO2 High-k Gate Stacks

W.H. Wu, M.C. Chen, M.F. Wang, T.H. Hou, L.G. Yao, Y. Jin, S.C. Chen, M.S. Liang (1.Department of Electronics Engineering, National Chiao Tung University, 2.Advanced Module Technology Division, Taiwan Semiconductor Manufacturing Company)

https://doi.org/10.7567/SSDM.2004.B-7-1