[B-7-1] Effects of Base Oxide and Silicon Composition on Charge Trapping in HfSiO/SiO2 High-k Gate Stacks

W.H. Wu、M.C. Chen、M.F. Wang、T.H. Hou、L.G. Yao、Y. Jin、S.C. Chen、M.S. Liang (1.Department of Electronics Engineering, National Chiao Tung University、2.Advanced Module Technology Division, Taiwan Semiconductor Manufacturing Company)

https://doi.org/10.7567/SSDM.2004.B-7-1