[B-7-3] Effects of post-deposition anneal on the electrical properties in HfSiO films grown by atomic layer deposition

H. -J. Cho、H. L. Lee、H. B. Park、T. S. Jeon、S. K. Park、B. J. Jin、S. B. Kang、Y. G. Shin、U. I. Chung、J. T. Moon (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2004.B-7-3