[B-7-3] Effects of post-deposition anneal on the electrical properties in HfSiO films grown by atomic layer deposition

H. -J. Cho, H. L. Lee, H. B. Park, T. S. Jeon, S. K. Park, B. J. Jin, S. B. Kang, Y. G. Shin, U. I. Chung, J. T. Moon (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2004.B-7-3