[B-8-1] High Performance fully silicided NiSi:Hf gate on LaAlO3/GOI n-MOSFET with Little Fermi-level Pinning

D. S. Yu、C. F. Cheng、Albert Chin、C. Zhu、M.-F. Li、Dim-Lee Kwong (1.Nano Sci. Tech. Ctr., National Chiao Tung Univ., Univ. System of Taiwan、2.Si Nano Device Lab., Dept. of Electrical & Computer Eng., National Univ. of Singapore、3.Dept. of Electrical & Computer Engineering, The Univ. of Texas)

https://doi.org/10.7567/SSDM.2004.B-8-1