[B-8-2] Effects of high pressure hydrogen and deuterium annealing on nMOSFET with Hf-base gate dielectrics

Hokyung Park, Byounghun Lee, Mark Gardner, Hyunsang Hwang (1.Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 2.International SEMATECH, 3.IBM Assignee, 4.AMD assignee)

https://doi.org/10.7567/SSDM.2004.B-8-2