[B-8-5] High Quality Hf-Silicate Gate Dielectrics Fabrication by Atomic Layer Deposition (ALD) Technology

Satoshi Kamiyama、Takayoshi Miura、Tomonori Aoyama、Hiroshi Kitajima、Tsunetoshi Arikado (1.Research Dept.1, Semiconductor Leading Edge Technologies (Selete), Inc.)

https://doi.org/10.7567/SSDM.2004.B-8-5