[B-8-5] High Quality Hf-Silicate Gate Dielectrics Fabrication by Atomic Layer Deposition (ALD) Technology
Satoshi Kamiyama, Takayoshi Miura, Tomonori Aoyama, Hiroshi Kitajima, Tsunetoshi Arikado
(1.Research Dept.1, Semiconductor Leading Edge Technologies (Selete), Inc.)
https://doi.org/10.7567/SSDM.2004.B-8-5
