[B-9-1] A Novel Cell Structure with Bit Line Cap Spacer (BCS) and Top Enlarged Storage Node Contact (TESC) for 90 nm DRAM Technology and Beyond

C.J. Yun、Y.K. Park、J.W. Lee、D.I. Bae、S.B. Kim、S.H. Shin、J.G. Lee、S.H. Lee、D.J. Lee、E.C. Lee、B.H. Roh、I.H. Nam、T.Y. Chung (1.DRAM Process Architecture Team, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2004.B-9-1