[C-4-1] High-Perfection Approaches to Si-based Devices through Strained Layer Epitaxy

J.C. Sturm、Haizhou Yin、R L. Peterson、K.D. Hobart、F.J. Kub (1.Princeton Institute for the Science and Technology of Materials and Department of Electrical Engineering、2.IBM Watson Research Center、3.Naval Research Laboratory)

https://doi.org/10.7567/SSDM.2004.C-4-1