[C-4-1] High-Perfection Approaches to Si-based Devices through Strained Layer Epitaxy

J.C. Sturm, Haizhou Yin, R L. Peterson, K.D. Hobart, F.J. Kub (1.Princeton Institute for the Science and Technology of Materials and Department of Electrical Engineering, 2.IBM Watson Research Center, 3.Naval Research Laboratory)

https://doi.org/10.7567/SSDM.2004.C-4-1