[C-6-4L] Ultra-Shallow Junction Formation using Novel Plasma Doping Technology beyond 50 nm MOS Devices

Won-ju Cho、Kiju Im、Chang-Geun Ahn、Jong-Heon Yang、In-Bok Baek、Seongjae Lee (1.Nanoelectronic Devices Team, Future Technology Research Division, ETRI)

https://doi.org/10.7567/SSDM.2004.C-6-4L