[D-1-2] 30-day-long Data Retention in Ferroelectric-gate FETs with HfO2 Buffer Layers

Kazuhiro Takahashi、Byung-Eun Park、Koji Aizawa、Hiroshi Ishiwara (1.Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology、2.Department of Electrical and Computer Engineering, University of Seoul、3.Precision & Intelligence Laboratory, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.2004.D-1-2