[D-1-2] 30-day-long Data Retention in Ferroelectric-gate FETs with HfO2 Buffer Layers

Kazuhiro Takahashi, Byung-Eun Park, Koji Aizawa, Hiroshi Ishiwara (1.Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2.Department of Electrical and Computer Engineering, University of Seoul, 3.Precision & Intelligence Laboratory, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.2004.D-1-2