[D-1-4] Robust 3-Metallization BEOL Process for 0.18 μm Embedded FRAM

S.K. Kang、H.S. Rhie、H.H. Kim、B.J. Koo、H.J. Joo、J.H. Park、Y.M. Kang、D.Y. Choi、S.Y. Lee、Kinam Kim (1.Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.2004.D-1-4