[D-4-3] Flash EEPROM Tunneling Oxide Reliability Characterization under the test of FN Constant Current Stress and Program/Erase Cycling by using ISSG Nitrided Oxide

Chao-Wei Kuo, Cheng-Tung Huang, Jih-Wen Chou, Shyang-Ming Tzeng, Chia-Ping Lai, Tzeng-Wen Tzeng, Chi-Lun Liu, Yih-En Huang, Wei-Zhe Wong, Hsiang-Chung Chang, Ching-Sung Yang, Saysamone Pittikoun, Chih-Hsun Chu, Chih-Chen Cho (1.Powerchip Semiconductor Corporation, 2.Ememory Technology Incorporation)

https://doi.org/10.7567/SSDM.2004.D-4-3