[D-4-3] Flash EEPROM Tunneling Oxide Reliability Characterization under the test of FN Constant Current Stress and Program/Erase Cycling by using ISSG Nitrided Oxide

Chao-Wei Kuo、Cheng-Tung Huang、Jih-Wen Chou、Shyang-Ming Tzeng、Chia-Ping Lai、Tzeng-Wen Tzeng、Chi-Lun Liu、Yih-En Huang、Wei-Zhe Wong、Hsiang-Chung Chang、Ching-Sung Yang、Saysamone Pittikoun、Chih-Hsun Chu、Chih-Chen Cho (1.Powerchip Semiconductor Corporation、2.Ememory Technology Incorporation)

https://doi.org/10.7567/SSDM.2004.D-4-3