[D-5-2] Source resistance reduction of AlGaN/GaN HFET using novel superlattice cap layer

T. Murata, A. Kanda, M. Hikita, Y. Hirose, Y. Uemoto, T. Tanaka, K. Inoue, D. Ueda (1.Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.2004.D-5-2