[D-5-2] Source resistance reduction of AlGaN/GaN HFET using novel superlattice cap layer

T. Murata、A. Kanda、M. Hikita、Y. Hirose、Y. Uemoto、T. Tanaka、K. Inoue、D. Ueda (1.Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.2004.D-5-2