[E-1-2] Dopant Profiling in Vertical Ultrathin Channel for Double-gate MOSFET by Scanning Nonlinear Dielectric Microscopy (SNDM)

M. Masahara, S. Hosokawa, T. Matsukawa, K. Endo, Y. Naitou, H. Tanoue, E. Suzuki (1.Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST))

https://doi.org/10.7567/SSDM.2004.E-1-2