[E-1-2] Dopant Profiling in Vertical Ultrathin Channel for Double-gate MOSFET by Scanning Nonlinear Dielectric Microscopy (SNDM)

M. Masahara、S. Hosokawa、T. Matsukawa、K. Endo、Y. Naitou、H. Tanoue、E. Suzuki (1.Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST))

https://doi.org/10.7567/SSDM.2004.E-1-2