Study of LGATE dependence of 2-D carrier profile in N-FET by Scanning Tunneling Microscopy

Hidenobu Fukutome; Takayuki Aoyama; Hiroshi Arimoto

doi:https://doi.org/10.7567/SSDM.2004.E-1-3

[E-1-3] Study of LGATE dependence of 2-D carrier profile in N-FET by Scanning Tunneling Microscopy

Hidenobu Fukutome、Takayuki Aoyama、Hiroshi Arimoto (1.FUJITSU LABORATORIES LTD., Silicon technologies laboratories, Advanced CMOS technology lab.、2.FUJITSU LTD., Advanced LSI development div.)

https://doi.org/10.7567/SSDM.2004.E-1-3

2004 International Conference on Solid State Devices and Materials

[E-1-3] Study of LGATE dependence of 2-D carrier profile in N-FET by Scanning Tunneling Microscopy