[E-2-3] Breakdown Mechanisms and Lifetime Prediction for 90nm-node Low-power HfSiON/SiO2 CMOSFETs

Masayuki Terai、Yuko Yabe、Hirohito Watanabe、Shinji Fujieda、Ayuka Morioka、Setsu Kotsuji、Toshiyuki Iwamoto、Motofumi Saitoh、Takashi Ogura、Yukishige Saito (1.System Devices Research Laboratories, NEC Corp.)

https://doi.org/10.7567/SSDM.2004.E-2-3