[E-2-4] Degradation Mechanism of HfAlOX/SiO2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis

Kenji Okada、Wataru Mizubayashi、Naoki Yasuda、Hiroyuki Ota、Koji Tominaga、Kunihiko Iwamoto、Tsuyoshi Horikawa、Katsuhiko Yamamoto、Hirokazu Hisamatsu、Hideki Satake、Toshihide Nabatame、Akira Toriumi (1.MIRAI-ASET、2.MIRAI-ASRC、3.Department of Materials Science, The University of Tokyo)

https://doi.org/10.7567/SSDM.2004.E-2-4