[E-2-4] Degradation Mechanism of HfAlOX/SiO2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis

Kenji Okada, Wataru Mizubayashi, Naoki Yasuda, Hiroyuki Ota, Koji Tominaga, Kunihiko Iwamoto, Tsuyoshi Horikawa, Katsuhiko Yamamoto, Hirokazu Hisamatsu, Hideki Satake, Toshihide Nabatame, Akira Toriumi (1.MIRAI-ASET, 2.MIRAI-ASRC, 3.Department of Materials Science, The University of Tokyo)

https://doi.org/10.7567/SSDM.2004.E-2-4