Low Temperature Solution Processed SiO2 Insulator Thin Films for Organic FET

Takehito Kodzasa; Manabu Yoshida; Sei Uemura; Satoshi Hoshino; Toshihide Kamata

doi:https://doi.org/10.7567/SSDM.2004.F-10-2L

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜 2004年9月17日
Tower Hall Funabori, Tokyo, Japan

[F-10-2L] Low Temperature Solution Processed SiO2 Insulator Thin Films for Organic FET

Takehito Kodzasa、Manabu Yoshida、Sei Uemura、Satoshi Hoshino、Toshihide Kamata (1.Photonics Research Institute, National Institute of Advances Industrial Science and Technology)

https://doi.org/10.7567/SSDM.2004.F-10-2L

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