Low Temperature Solution Processed SiO2 Insulator Thin Films for Organic FET

Takehito Kodzasa; Manabu Yoshida; Sei Uemura; Satoshi Hoshino; Toshihide Kamata

doi:https://doi.org/10.7567/SSDM.2004.F-10-2L

[F-10-2L] Low Temperature Solution Processed SiO2 Insulator Thin Films for Organic FET

Takehito Kodzasa, Manabu Yoshida, Sei Uemura, Satoshi Hoshino, Toshihide Kamata (1.Photonics Research Institute, National Institute of Advances Industrial Science and Technology)

https://doi.org/10.7567/SSDM.2004.F-10-2L

2004 International Conference on Solid State Devices and Materials

[F-10-2L] Low Temperature Solution Processed SiO2 Insulator Thin Films for Organic FET