[F-4-5L] Layout dependence of RF CMOS performance on ultra-thin Si substrate
T. Ohguro、N. Sato、M. Matsuo、K. Kojima、H. S. Momose、K. Ishimaru、H. Ishiuchi
(1.SoC Research & Development Center、2.Process & Manufacturing Engineering Center Toshiba Corporation Semiconductor Company)
https://doi.org/10.7567/SSDM.2004.F-4-5L
