Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers

Yasuhiko Ishikawa; Kazuaki Yamauchi; Hiroya Ikeda; Yukinori Ono; Masao Nagase; Michiharu Tabe

doi:https://doi.org/10.7567/SSDM.2004.H-3-5

[H-3-5] Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers

Yasuhiko Ishikawa、Kazuaki Yamauchi、Hiroya Ikeda、Yukinori Ono、Masao Nagase、Michiharu Tabe (1.Research Institute of Electronics, Shizuoka University、2.NTT Basic Research Laboratories, NTT Corporation)

https://doi.org/10.7567/SSDM.2004.H-3-5

2004 International Conference on Solid State Devices and Materials

[H-3-5] Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers