[P10-7] High Pressure H2/D2 Annealed SONOS Nonvolatile Memory Devices

Sangmoo Choi、Man Jang、Hokyung Park、Sanghun Jeon、Juhyung Kim、Chungwoo Kim、Hyunsang Hwang (1.Department of Materials Science and Engineering, Gwangju Institute of Science and Technology、2.MD laboratory, Samsung Advanced Institute of Technology)

https://doi.org/10.7567/SSDM.2004.P10-7