Reduced Hot-Carrier Induced Degradation of NMOS I/O Transistors with Sub-micron Source-Drain Diffusion Length for 0.11 μm Dual Gate Oxide CMOS Technology

Kwang-Seng See; Wai-Shing Lau; Hong Liao; Jae Gon Lee; Elgin Kiok-Boone Quek; Kheng-Chok Tee; Lap-Hung Chan

doi:https://doi.org/10.7567/SSDM.2004.P2-11

[P2-11] Reduced Hot-Carrier Induced Degradation of NMOS I/O Transistors with Sub-micron Source-Drain Diffusion Length for 0.11 μm Dual Gate Oxide CMOS Technology

Kwang-Seng See、Wai-Shing Lau、Hong Liao、Jae Gon Lee、Elgin Kiok-Boone Quek、Kheng-Chok Tee、Lap-Hung Chan (1.School of Electrical and Electronic Engineering, Nanyang Technological University、2.Department of Technology Development, Chartered Semiconductor Manufacturing Ltd)

https://doi.org/10.7567/SSDM.2004.P2-11

2004 International Conference on Solid State Devices and Materials

[P2-11] Reduced Hot-Carrier Induced Degradation of NMOS I/O Transistors with Sub-micron Source-Drain Diffusion Length for 0.11 μm Dual Gate Oxide CMOS Technology