RTS amplitudes in decanano n-MOSFETs with conventional and high-κ gate stacks

Angelica Lee; Andrew R. Brown; Asen Asenov; Scott Roy

doi:https://doi.org/10.7567/SSDM.2004.P2-12

2004 International Conference on Solid State Devices and Materials

Sep 14, 2004 - Sep 17, 2004
Tower Hall Funabori, Tokyo, Japan

[P2-12] RTS amplitudes in decanano n-MOSFETs with conventional and high-κ gate stacks

Angelica Lee, Andrew R. Brown, Asen Asenov, Scott Roy (1.Device Modelling Group, Dept. of Electronics and Electrical Engineering University of Glasgow)

https://doi.org/10.7567/SSDM.2004.P2-12

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