65nm-node Low-Standby-Power FETs with HfAlOx Gate Dielectric

H. Ohji; K. Torii; T. Kawahara; T. Maeda; H. Itoh; A. Mutoh; R. Mitsuhashi; A. Horiuchi; H. Kitajima; F. Ootsuka; M. Yasuhira; T. Arikado

doi:https://doi.org/10.7567/SSDM.2004.P2-13

2004 International Conference on Solid State Devices and Materials

Sep 14, 2004 - Sep 17, 2004
Tower Hall Funabori, Tokyo, Japan

[P2-13] 65nm-node Low-Standby-Power FETs with HfAlOx Gate Dielectric

H. Ohji, K. Torii, T. Kawahara, T. Maeda, H. Itoh, A. Mutoh, R. Mitsuhashi, A. Horiuchi, H. Kitajima, F. Ootsuka, M. Yasuhira, T. Arikado (1.Semiconductor Leading Edge Technologies, Inc.)

https://doi.org/10.7567/SSDM.2004.P2-13

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