[P2-19] A Novel High Ruggedness Power MOSFET With a Planar Oxide Deep P+ Implant Structure

Feng-Tso Chien、Ming-Hung Lai、Shih-Tzung Su、Ching-Ling Cheng (1.Dept. of Electronic Engineering, Feng Chia University、2.R&D Dept., Chino-Excel Technology Crop.)

https://doi.org/10.7567/SSDM.2004.P2-19