[P3-2] Effect of Post Thermal Processes on Nitride/W/WNx/poly-Si Gate Stack

Heung-Jae Cho, Se-Aug Jang, Yong Soo Kim, Kwan-Yong Lim, Jae-Geun Oh, Jung-Ho Lee, Tae-Su Park, Tae-Sun Back, Jun-Mo Yang, Hong-Seon Yang, Hyun-Chul Sohn, Jin-Woong Kim (1.Memory R&D Division, Hynix Semiconductor Inc.)

https://doi.org/10.7567/SSDM.2004.P3-2