[P3-22L] Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface

Hideaki Fujiwara、Masaru Kadoshima、Koji Akiyama、Nobuyuki Mise、Shinji Migita、Hiroyuki Ota、Morifumi Ohno、Toshihide Nabatame、Tsuyoshi Horikawa、Akira Toriumi (1.MIRAI-ASET, AIST Tsukuba West 7、2.MIRAI-ASRC, AIST Tsukuba, West 7、3.Dept. of Materials Science, Univ. of Tokyo)

https://doi.org/10.7567/SSDM.2004.P3-22L