Nanoscale Strained Si/SiGe Heterojunction Tri-gate FETs

S. T. Chang; S. H. Hwang

doi:https://doi.org/10.7567/SSDM.2004.P4-4

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜 2004年9月17日
Tower Hall Funabori, Tokyo, Japan

[P4-4] Nanoscale Strained Si/SiGe Heterojunction Tri-gate FETs

S. T. Chang、S. H. Hwang (1.Department of Electronic Engineering, Chung Yuan Christian University、2.Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University)

https://doi.org/10.7567/SSDM.2004.P4-4

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