Novel properties of erbium-silicided n-type Schottky barrier MOSFETs

2004 International Conference on Solid State Devices and Materials

Sep 14, 2004 - Sep 17, 2004
Tower Hall Funabori, Tokyo, Japan

Moongyu Jang, Yarkyeon Kim, Jaeheon Shin, Seongjae Lee (1.Electronics and Telecommunications Research Institute, Future technology Research Division)