The Japan Society of Applied Physics

[P8-12L] Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation

Sangsu Park、Hyunsik Im、Ilgweon Kim、Toshiro Hiramoto (1.Institute of Industrial Science, University of Tokyo、2.Univ. of Dongguk, Dept. of Semiconductor Science)

https://doi.org/10.7567/SSDM.2004.P8-12L