Strain-Relief Mechanisms of Stepwise Ge composition Multilayer Buffers and High PVCR Si/Si1-xGex ASDQW RTD Formed with Triple-Layer Buffer

[P8-6] Strain-Relief Mechanisms of Stepwise Ge composition Multilayer Buffers and High PVCR Si/Si1-xGex ASDQW RTD Formed with Triple-Layer Buffer

Hirotaka Maekawa, Yoshihiro Sano, Yoshiyuki Suda (1.Faculty of Technology, Tokyo University of Agriculture and Technology)