[A-1-2] The Impact of Thickness Control in HfSiON Gate Dielectric on Electron Mobility with sub-nm EOT

M. Mizutani, T. Hayashi, M. Inoue, J. Yugami, K. Nomura, J. Tsuchimoto, Y. Ohno, M. Yoneda (1.Process Technology Development Div., RENESAS Technology Corp., 2.Wafer Process Engineering Dept.(1), RENESAS Semiconductor Engineering Corp.)

https://doi.org/10.7567/SSDM.2005.A-1-2