[A-1-2] The Impact of Thickness Control in HfSiON Gate Dielectric on Electron Mobility with sub-nm EOT

M. Mizutani、T. Hayashi、M. Inoue、J. Yugami、K. Nomura、J. Tsuchimoto、Y. Ohno、M. Yoneda (1.Process Technology Development Div., RENESAS Technology Corp.、2.Wafer Process Engineering Dept.(1), RENESAS Semiconductor Engineering Corp.)

https://doi.org/10.7567/SSDM.2005.A-1-2