The Japan Society of Applied Physics

[A-1-3] Extendibility of High Mobility HfSiON Gate Dielectrics

Seiji Inumiya、Takayoshi Miura、Kiyoshi Shirai、Takeo Matsuki、Kazuyoshi Torii、Yasuo Nara (1.Semiconductor Leading Edge Technologies, Inc. (Selete)、2.Hitachi, Ltd., Central Research Laboratory)

https://doi.org/10.7567/SSDM.2005.A-1-3